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| NTE3032 Phototransistor Detector NPN-Si, Visible & IR Description: The NTE3032 is a silicon NPN phototransistor detector in a TO18 type package designed for use in industrial inspection, processing and control, counter, sorter, switching, and logic circuit applications or any design requiring radiation sensitivity and stable characteristics. Features: D Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application D Minimum Light Current: 8mH @ H = 5mW/cm2 D External Base for Added Control D Annular Passivated Structure for Stability and Reliability D Popular TO18 Type Package for Easy Handling and Mounting Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Total Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Static Characteristics Collector Dark Current Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Optical Characteristics Light Current Photo Current Rise Time Photo Current Fall Time IL tr tf VCC = 5V, RL = 100, Note 1 RL = 100, IL = 1mA (Peak), Note 2 8 - - - 15 15 - - - mA s s ICEO VCC = 10V, H 0 - 80 5 - - - 100 - - nA V V V(BR)CBO IC = 100A V(BR)ECO IE = 100A Symbol Test Conditions Min Typ Max Unit Note 1. Radiation flux density (H) equal to 5mW/cm2 emitted from a tungsten source at a color temperature of 2870 K. Note 2. For unsaturated response time measurement, radiation is provided by pulsed GaAs (gallium arsenide) light-emitting diode ( m) with a pulse width equal to or greater than 10s, IL = 1mA Peak. .210 (5.33) Dia .120 (3.05) Dia Window on Center Line .184 (4.67) Dia .240 (6.09) .150 (3.81) Die Seating Plane .021 (0.53) .500 (12.7) Min .018 (0.45) Dia Typ .040 (1.02) .100 (2.54) Dia 45 Collector Emitter Base |
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